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Diodes Incorporated DMPH3010LK3-13 — Discrete Semiconductors

Diodes Incorporated DMPH3010LK3-13

MPNDMPH3010LK3-13
End of Life
$0.8100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMPH3010LK3-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation3.9W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs139 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6807 pF @ 15 V