DMP6185SEQ-13

Diodes Incorporated

MOSFET P-CHANNEL 60V 3A SOT223

Diodes Incorporated DMP6185SEQ-13
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MOQ 2 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP6185SEQ-13 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation2.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds708 pF @ 30 V
DMP6185SEQ-13
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