DMP6110SVT-7

Diodes Incorporated

MOSFET P-CH 60V 7.3A TSOT26

Diodes Incorporated DMP6110SVT-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP6110SVT-7 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7.3A (Tc)
Power dissipation1.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs105mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs17.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds969 pF @ 30 V
DMP6110SVT-7
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