DMP4013LFGQ-13

Diodes Incorporated

MOSFET P-CH 40V 10.3A PWRDI3333

Diodes Incorporated DMP4013LFGQ-13
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP4013LFGQ-13 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10.3A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs13mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs68.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3426 pF @ 20 V
DMP4013LFGQ-13
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