DMP32D9UFZ-7B

Diodes Incorporated

MOSFET P-CH 30V 200MA 3DFN

Diodes Incorporated DMP32D9UFZ-7B
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP32D9UFZ-7B specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.2V, 10V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation390mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs5Ohm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.35 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds22.5 pF @ 15 V
DMP32D9UFZ-7B
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