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Diodes Incorporated DMP3099LQ-13 — Discrete Semiconductors

Diodes Incorporated DMP3099LQ-13

MPNDMP3099LQ-13
Active

MOSFET P-CH 30V 3.8A SOT23 T&R

$0.3700Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP3099LQ-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.8A (Ta)
Power dissipation1.08W
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds563 pF @ 25 V