DMP3011SFVW-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

Diodes Incorporated DMP3011SFVW-13
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP3011SFVW-13 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C19.8A (Ta), 50A (Tc)
Power dissipation980mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 11.5A, 10V
Gate charge (Qg) (Max) @ vgs46 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2380 pF @ 15 V
DMP3011SFVW-13
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