DMP2160UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

Diodes Incorporated DMP2160UFDB-7
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MOQ 2 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP2160UFDB-7 specifications
Parameter / AttributeSpecification / Value
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C3.8A
Power - max1.4W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 2.8A, 4.5V
Gate charge (Qg) (Max) @ vgs6.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds536pF @ 10V
DMP2160UFDB-7
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