DMP2045UFY4-7

Diodes Incorporated

MOSFET P-CH 20V 4.7A X2-DFN2015

Diodes Incorporated DMP2045UFY4-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP2045UFY4-7 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C4.7A (Ta)
Power dissipation670mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs6.8 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds634 pF @ 10 V
DMP2045UFY4-7
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