DMP2008UFG-7

Diodes Incorporated

MOSFET P-CH 20V 14A PWRDI3333

Diodes Incorporated DMP2008UFG-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP2008UFG-7 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C14A (Ta), 54A (Tc)
Power dissipation2.4W (Ta), 41W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 12A, 4.5V
Gate charge (Qg) (Max) @ vgs72 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds6909 pF @ 10 V
DMP2008UFG-7
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