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Diodes Incorporated DMP10H088SPS-13 — Discrete Semiconductors

Diodes Incorporated DMP10H088SPS-13

MPNDMP10H088SPS-13
Active
$0.3290Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP10H088SPS-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation2.2W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs83mOhm @ 4.4A, 10V
Gate charge (Qg) (Max) @ vgs27.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1808 pF @ 50 V