DMP1007UCB9-7

Diodes Incorporated

MOSFET P-CH 8V 13.2A U-WLB1515-9

Diodes Incorporated DMP1007UCB9-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP1007UCB9-7 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C13.2A (Ta)
Power dissipation840mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
Case9-UFBGA, WLBGA
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs5.7mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs8.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds900 pF @ 4 V
DMP1007UCB9-7
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