DMP1005UFDF-7

Diodes Incorporated

MOSFET P-CH 12V 26A 6UDFN

Diodes Incorporated DMP1005UFDF-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMP1005UFDF-7 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation2.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs8.5mOhm @ 5A, 4.5V
Gate charge (Qg) (Max) @ vgs47 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds2475 pF @ 6 V
DMP1005UFDF-7
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