DMN65D8LFB-7B

Diodes Incorporated

MOSFET N-CH 60V 260MA 3DFN

Diodes Incorporated DMN65D8LFB-7B
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN65D8LFB-7B specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C260mA (Ta)
Power dissipation430mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-UFDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 115mA, 10V
Input capacitance (Ciss) (Max) @ vds25 pF @ 25 V
DMN65D8LFB-7B
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