DMN65D8LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

Diodes Incorporated DMN65D8LDWQ-7
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MOQ 2 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN65D8LDWQ-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C180mA
Power - max300mW
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs6Ohm @ 115mA, 10V
Gate charge (Qg) (Max) @ vgs0.87nC @ 10V
Input capacitance (Ciss) (Max) @ vds22pF @ 25V
DMN65D8LDWQ-7
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