DMN63D8LW-7

Diodes Incorporated

MOSFET N-CH 30V 380MA SOT323

Diodes Incorporated DMN63D8LW-7
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[IN STOCK] In Stock: 2,123 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN63D8LW-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C380mA (Ta)
Power dissipation300mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs2.8Ohm @ 250mA, 10V
Gate charge (Qg) (Max) @ vgs0.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23.2 pF @ 25 V
DMN63D8LW-7
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