DMN63D1L-13

Diodes Incorporated

Diodes Incorporated DMN63D1L-13
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MOQ 10 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN63D1L-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C380mA (Ta)
Power dissipation370mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs2Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.3 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds30 pF @ 25 V
DMN63D1L-13
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