DMN6040SSS-13

Diodes Incorporated

MOSFET N-CH 60V 5.5A 8SO

Diodes Incorporated DMN6040SSS-13
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN6040SSS-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.5A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs22.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1287 pF @ 25 V
DMN6040SSS-13
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