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Diodes Incorporated DMN6040SE-13 — Discrete Semiconductors

Diodes Incorporated DMN6040SE-13

MPNDMN6040SE-13
Active

MOSFET BVDSS: 41V 60V SOT223 T&R

$0.5500Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN6040SE-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power dissipation1.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs22.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1287 pF @ 25 V