DMN4800LSS-13

Diodes Incorporated

MOSFET N-CH 30V 9A 8SOP

Diodes Incorporated DMN4800LSS-13
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN4800LSS-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta)
Power dissipation1.46W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.6V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs9.47 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds798 pF @ 10 V
DMN4800LSS-13
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