DMN4468LSS-13

Diodes Incorporated

MOSFET N CH 30V 10A 8SOP

Diodes Incorporated DMN4468LSS-13
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN4468LSS-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation1.52W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.95V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 11.6A, 10V
Gate charge (Qg) (Max) @ vgs18.85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds867 pF @ 10 V
DMN4468LSS-13
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