DMN4026SSDQ-13

Diodes Incorporated

Diodes Incorporated DMN4026SSDQ-13
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MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN4026SSDQ-13 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C7A
Power - max1.3W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs19.1nC @ 10V
Input capacitance (Ciss) (Max) @ vds1060pF @ 20V
DMN4026SSDQ-13
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