DMN33D8LTQ-7

Diodes Incorporated

MOSFET N-CH 30V 115MA SOT523

Diodes Incorporated DMN33D8LTQ-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN33D8LTQ-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C115mA (Ta)
Power dissipation240mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSOT-523
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs5Ohm @ 10mA, 4V
Gate charge (Qg) (Max) @ vgs0.55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds48 pF @ 5 V
DMN33D8LTQ-7
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