DMN32D2LFB4-7

Diodes Incorporated

MOSFET N-CH 30V 300MA 3DFN

Diodes Incorporated DMN32D2LFB4-7
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MOQ 10 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN32D2LFB4-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation350mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 100mA, 4V
Input capacitance (Ciss) (Max) @ vds39 pF @ 3 V
DMN32D2LFB4-7
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