DMN32D2LDF-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.4A SOT353

Diodes Incorporated DMN32D2LDF-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN32D2LDF-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C400mA
Power - max280mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Common Source
Case5-TSSOP, SC-70-5, SOT-353
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 100mA, 4V
Input capacitance (Ciss) (Max) @ vds39pF @ 3V
DMN32D2LDF-7
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