DMN32D0LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

Diodes Incorporated DMN32D0LV-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN32D0LV-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C680mA (Ta)
Power - max480mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Configuration2 N-Channel (Dual)
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 100mA, 4V
Gate charge (Qg) (Max) @ vgs0.62nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds44.8pF @ 15V
DMN32D0LV-7
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