Skip to main content
Diodes Incorporated DMN31D5UFZ-7B — Discrete Semiconductors

Diodes Incorporated DMN31D5UFZ-7B

MPNDMN31D5UFZ-7B
Active

MOSFET N-CH 30V 220MA 3DFN

$0.3800Ref. price · indicative, final on quote
Packaging3-XFDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN31D5UFZ-7B specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C220mA (Ta)
Power dissipation393mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.35 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds22.2 pF @ 15 V