DMN3190LDW-7

Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

Diodes Incorporated DMN3190LDW-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN3190LDW-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C1A
Power - max320mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 1.3A, 10V
Gate charge (Qg) (Max) @ vgs2nC @ 10V
Input capacitance (Ciss) (Max) @ vds87pF @ 20V
DMN3190LDW-7
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