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Diodes Incorporated DMN30H4D0L-13 — Discrete Semiconductors

Diodes Incorporated DMN30H4D0L-13

MPNDMN30H4D0L-13
Active

MOSFET N-CH 300V 250MA SOT23

$0.5200Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN30H4D0L-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)2.7V, 10V
Current - continuous drain (Id) @ 25°C250mA (Ta)
Power dissipation310mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4Ohm @ 300mA, 10V
Gate charge (Qg) (Max) @ vgs7.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds187.3 pF @ 25 V