Skip to main content
Diodes Incorporated DMN3024LK3-13 — Discrete Semiconductors

Diodes Incorporated DMN3024LK3-13

MPNDMN3024LK3-13
Active
$0.5800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3024LK3-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9.78A (Ta)
Power dissipation2.17W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs12.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds608 pF @ 15 V