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Diodes Incorporated DMN3016LFDE-13 — Discrete Semiconductors

Diodes Incorporated DMN3016LFDE-13

MPNDMN3016LFDE-13
Active

MOSFET N-CH 30V 10A 6UDFN

$0.4300Ref. price · indicative, final on quote
Packaging6-PowerUDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DMN3016LFDE-13 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation730mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-PowerUDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs25.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1415 pF @ 15 V