DMN26D0UFB4-7

Diodes Incorporated

Diodes Incorporated DMN26D0UFB4-7
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN26D0UFB4-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C230mA (Ta)
Power dissipation350mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 100mA, 4.5V
Input capacitance (Ciss) (Max) @ vds14.1 pF @ 15 V
DMN26D0UFB4-7
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