DMN2058U-7

Diodes Incorporated

MOSFET N-CH 20V 4.6A SOT23-3

Diodes Incorporated DMN2058U-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2058U-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 10V
Current - continuous drain (Id) @ 25°C4.6A (Ta)
Power dissipation1.13W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs7.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds281 pF @ 10 V
DMN2058U-7
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