DMN2020UFCL-7

Diodes Incorporated

MOSFET N-CH 20V 9A X1-DFN1616-6

Diodes Incorporated DMN2020UFCL-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2020UFCL-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C9A (Ta)
Power dissipation610mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case6-PowerUFDFN
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 9A, 4.5V
Gate charge (Qg) (Max) @ vgs21.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1788 pF @ 10 V
DMN2020UFCL-7
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