DMN2005K-7

Diodes Incorporated

MOSFET N-CH 20V 300MA SOT23-3

Diodes Incorporated DMN2005K-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2005K-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 2.7V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation350mW (Ta)
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id900mV @ 100µA
Rds on (Max) @ id, vgs1.7Ohm @ 200mA, 2.7V
DMN2005K-7
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