DMN2005DLP4K-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.3A 6DFN

Diodes Incorporated DMN2005DLP4K-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2005DLP4K-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C300mA
Power - max400mW
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case6-XFDFN Exposed Pad
Vgs(th) (Max) @ id900mV @ 100µA
Rds on (Max) @ id, vgs1.5Ohm @ 10mA, 4V
DMN2005DLP4K-7
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