DMN2004DWK-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT-363

Diodes Incorporated DMN2004DWK-7
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN2004DWK-7 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C540mA
Power - max200mW
Operating temperature-65°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs550mOhm @ 540mA, 4.5V
Input capacitance (Ciss) (Max) @ vds150pF @ 16V
DMN2004DWK-7
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