DMN13H750S-7

Diodes Incorporated

MOSFET N-CH 130V 1A SOT23

Diodes Incorporated DMN13H750S-7
Download datasheet (PDF)
[IN STOCK] In Stock: 1,612 pcs
$1.35/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN13H750S-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage130 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C1A (Ta)
Power dissipation770mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs750mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs5.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds231 pF @ 25 V
DMN13H750S-7
[ALLOC] verified
Quote