DMN10H220L-7

Diodes Incorporated

MOSFET N-CH 100V 1.4A SOT23

DMN10H220L-7
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN10H220L-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.4A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs220mOhm @ 1.6A, 10V
Gate charge (Qg) (Max) @ vgs8.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds401 pF @ 25 V
DMN10H220L-7
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