DMN10H170SK3-13

Diodes Incorporated

MOSFET N-CH 100V 12A TO252-3

Diodes Incorporated DMN10H170SK3-13
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN10H170SK3-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation42W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs140mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs9.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1167 pF @ 25 V
DMN10H170SK3-13
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