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Diodes Incorporated DMN10H120SFG-13 — Discrete Semiconductors

Diodes Incorporated DMN10H120SFG-13

MPNDMN10H120SFG-13
End of Life
$0.6400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN10H120SFG-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C3.8A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 3.3A, 10V
Gate charge (Qg) (Max) @ vgs10.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds549 pF @ 50 V