DMN1019USN-7

Diodes Incorporated

Diodes Incorporated DMN1019USN-7
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN1019USN-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.2V, 2.5V
Current - continuous drain (Id) @ 25°C9.3A (Ta)
Power dissipation680mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id800mV @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 9.7A, 4.5V
Gate charge (Qg) (Max) @ vgs50.6 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds2426 pF @ 10 V
DMN1019USN-7
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