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Diodes Incorporated DMN1004UFV-13 — Discrete Semiconductors

Diodes Incorporated DMN1004UFV-13

MPNDMN1004UFV-13
Active

MOSFET N-CH 12V 70A POWERDI3333

$0.5700Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN1004UFV-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation1.9W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs3.8mOhm @ 15A, 4.5V
Gate charge (Qg) (Max) @ vgs47 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds2385 pF @ 6 V