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Diodes Incorporated DMHC10H170SFJ-13

Diodes Incorporated DMHC10H170SFJ-13

MPNDMHC10H170SFJ-13
End of Life

MOSFET 2N/2P-CH 100V 2.9A 12VDFN

$1.24Ref. price · indicative, final on quote
Packaging12-VDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMHC10H170SFJ-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C2.9A, 2.3A
Power - max2.1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N and 2 P-Channel (Full Bridge)
Case12-VDFN Exposed Pad
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs9.7nC @ 10V
Input capacitance (Ciss) (Max) @ vds1167pF @ 25V