DMG9933USD-13

Diodes Incorporated

Diodes Incorporated DMG9933USD-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG9933USD-13 specifications
Parameter / AttributeSpecification / Value
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4.6A
Power - max1.15W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 4.8A, 4.5V
Gate charge (Qg) (Max) @ vgs6.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds608.4pF @ 6V
DMG9933USD-13
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