DMG9926UDM-7

Diodes Incorporated

MOSFET 2N-CH 20V 4.2A SOT-26

Diodes Incorporated DMG9926UDM-7
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG9926UDM-7 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual) Common Drain
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4.2A
Power - max980mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-23-6
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 8.2A, 4.5V
Gate charge (Qg) (Max) @ vgs8.3nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds856pF @ 10V
DMG9926UDM-7
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