DMG8601UFG-7

Diodes Incorporated

MOSFET 2N-CH 20V 6.1A 8DFN

Diodes Incorporated DMG8601UFG-7
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[IN STOCK] In Stock: 492 pcs
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG8601UFG-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.1A
Power - max920mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Common Drain
Case8-PowerUDFN
Vgs(th) (Max) @ id1.05V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 6.5A, 4.5V
Gate charge (Qg) (Max) @ vgs8.8nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds143pF @ 10V
DMG8601UFG-7
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