DMG6402LVT-7

Diodes Incorporated

MOSFET N-CH 30V 6A TSOT26

Diodes Incorporated DMG6402LVT-7
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG6402LVT-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power dissipation1.75W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs11.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds498 pF @ 15 V
DMG6402LVT-7
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