DMG3418L-7

Diodes Incorporated

MOSFET N-CH 30V 4A SOT23

Diodes Incorporated DMG3418L-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG3418L-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation1.4W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs5.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds464.3 pF @ 15 V
DMG3418L-7
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