DMG2301L-7

Diodes Incorporated

MOSFET P-CH 20V 3A SOT23

Diodes Incorporated DMG2301L-7
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG2301L-7 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs120mOhm @ 2.8A, 4.5V
Gate charge (Qg) (Max) @ vgs5.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds476 pF @ 10 V
DMG2301L-7
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